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    車(chē)用SGT MOSFET

    車(chē)用SGT MOSFET

    SGT MOSFET是對(duì)Trench MOS的?種改良結(jié)構(gòu)。較傳統(tǒng)Trench MOSFET,SGT MOSFET在柵電極下方增加了?塊多晶硅電極,即屏蔽電極或稱(chēng)耦合電極。屏蔽電極與源電極相連,即實(shí)現(xiàn)了屏蔽柵極與漂移區(qū)的作?,減小了?勒電容,器件的開(kāi)關(guān)速度得以加快,同時(shí)?實(shí)現(xiàn)了電荷耦合效應(yīng),減小了漂移區(qū)臨界電場(chǎng)強(qiáng)度,器件的導(dǎo)通電阻得以減小,開(kāi)關(guān)損耗能夠更低。

    Part Number VDS (V) ID (A) 25℃ PD(W) 25℃ RDS(ON)(mΩ)
    (VGS=10V)(Max)
    Qg(nC)(VGS=10V)
    (Typ)
    VGS(V) VGS(th)(V)
    (Typ)
    Package 是否符合車(chē)規(guī)要求
    RMD100N15S-AU 150 60 128 10 25 20 3.3 PDFN5*6
    RMD080N10S-AU 100 69 72 8 62 20 3.3 PDFN5*6
    RMD040N10S-AU 100 100 86 4 99 20 3.3 PDFN5*6
    RMR020N10S-AU 100 188 352 2 186 20 3.3 TOLL
    RMR015N08S-AU 80 300 278 1.5 218 20 3.3 TOLL
    RMD090N06SL-AU 60 45 30 9 24 20 1.8 PDFN5*6
    RMD060N06SL-AU 60 56 33 6 35 20 1.8 PDFN5*6
    RMB024N06SL-AU 60 160 125 2.4 80 20 1.8 TO-220
    RMD024N06SL-AU 60 160 125 2.4 80 20 1.8 PDFN5*6
    RMR015N04SL-AU 40 160 125 1.5 89 20 1.6 TOLL
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